SiCBerg Facility
European SiC Platform

About SiCBerg

European Silicon Carbide Power Semiconductor Platform

Engineering the next generation of power electronics through advanced silicon carbide technology and deep semiconductor expertise.

Who We Are

Building the Future of Power Electronics

SiCBerg is a European silicon carbide power semiconductor platform dedicated to advancing global power electronics through innovative SiC technology. We are not simply a component supplier — we are a comprehensive technology partner enabling the next era of high-efficiency, high-performance power systems.

Founded on the principles of engineering excellence and deep semiconductor expertise, SiCBerg emerged from a clear vision: to bridge the gap between cutting-edge silicon carbide material science and real-world power electronics applications. Our European heritage brings a tradition of precision engineering, rigorous quality standards, and a commitment to long-term technological advancement.

Our mission is to accelerate the global transition to efficient, sustainable power systems by delivering world-class silicon carbide devices, comprehensive application support, and deep technical collaboration. We serve industries at the forefront of the energy transition — renewable energy, electric vehicle infrastructure, industrial automation, grid modernization, and advanced electronics.

"We believe silicon carbide is not just a better material — it is the foundation for a more efficient, sustainable, and electrified future."

At SiCBerg, trust and credibility are earned through performance, transparency, and partnership. Every device we deliver is backed by rigorous testing, comprehensive documentation, and a commitment to your success. We stand behind our technology with industry-leading quality certifications, extensive reliability validation, and responsive technical support.

Global Power Transition
Our Story

Why SiCBerg Was Founded

The global energy landscape is undergoing a profound transformation. Renewable energy generation, electric mobility, industrial electrification, and grid modernization are driving unprecedented demand for high-efficiency, high-performance power electronics.

Traditional silicon-based power semiconductors, while mature and widely deployed, face fundamental physical limitations that constrain efficiency, power density, and thermal performance. These limitations translate directly into larger systems, higher energy losses, increased cooling requirements, and ultimately, slower adoption of critical clean energy technologies.

Silicon carbide changes everything. With its superior material properties — wider bandgap, higher thermal conductivity, greater breakdown field strength — SiC enables power systems that are smaller, lighter, more efficient, and more reliable. But realizing this potential requires more than just material science. It demands deep application expertise and comprehensive technical support.

SiCBerg was founded to be that partner. We are a platform, not just a supplier — bringing together advanced SiC device technology, application-specific solutions, global market engagement, and unwavering commitment to quality and reliability. Our role is to accelerate the adoption of silicon carbide across industries, enabling our partners to build the next generation of power systems with confidence.

What We Do

Four Pillars of Excellence

SiCBerg delivers comprehensive silicon carbide solutions across the entire value chain — from device innovation to global market integration.

Device Technology

We design, develop, and deliver world-class silicon carbide power semiconductors — SiC MOSFETs, Schottky barrier diodes, and integrated power modules.

Our devices are engineered for maximum performance, reliability, and ease of integration, leveraging advanced cell architectures, optimized packaging, and rigorous qualification.

From 650V to 10kV+ voltage classes, our portfolio spans the full spectrum of power electronics applications.

Application Integration

Silicon carbide adoption requires more than great devices — it demands deep application expertise and comprehensive technical support.

We work closely with system designers to optimize device selection, circuit topology, thermal management, and gate drive design, ensuring maximum performance and reliability in real-world conditions.

Our application engineers provide reference designs, simulation models, and hands-on collaboration to accelerate your time to market.

Global Market Engagement

SiCBerg serves industries and markets worldwide — renewable energy, EV charging infrastructure, industrial power systems, grid modernization, aerospace, and advanced electronics.

We understand the unique requirements, standards, and challenges of each vertical, and tailor our solutions accordingly.

Our global presence ensures responsive support, local expertise, and seamless collaboration wherever you operate.

Quality & Reliability

Trust is earned through performance. Every SiCBerg device undergoes rigorous testing and qualification to industry-leading standards.

We hold ISO 9001:2015 certification, AEC-Q101 automotive-grade qualification, and conduct extensive reliability testing including 10,000+ hour HTOL, thermal cycling, and humidity stress.

Our commitment to quality extends from wafer fabrication through final test, packaging, and delivery — ensuring you receive devices you can depend on.

Credibility & Trust

Why Trust SiCBerg

Our commitment to quality, reliability, and transparency is backed by industry-leading certifications, rigorous testing, and proven performance.

ISO 9001:2015

Quality Management System

Certified to international quality standards, ensuring consistent processes, continuous improvement, and customer satisfaction across all operations.

AEC-Q101

Automotive-Grade Qualification

Full AEC-Q101 qualification for automotive applications, meeting the stringent reliability and performance requirements of the automotive industry.

10,000h+ HTOL

Extensive Reliability Testing

Rigorous reliability validation including high-temperature operating life (HTOL), thermal cycling, humidity stress, and accelerated aging tests.

IP Portfolio

Intellectual Property & Innovation

Proprietary device architectures, process technologies, and application innovations protected by a growing portfolio of patents and trade secrets.

Leadership & Expertise

Deep Semiconductor Expertise

SiCBerg is built on a foundation of decades of collective semiconductor expertise. Our team brings deep experience in power device physics, advanced materials science, semiconductor manufacturing, and power electronics system design.

Our engineering leadership has spent years focused exclusively on silicon carbide technology — from fundamental material properties and device architectures to manufacturing processes and application-specific optimization. This depth of expertise enables us to push the boundaries of SiC performance while maintaining the reliability and quality our customers demand.

European engineering heritage is at the core of our identity. We bring a tradition of precision, rigor, and long-term thinking to every aspect of our work — from device design and process development to quality assurance and customer collaboration. This heritage is reflected in our commitment to excellence, transparency, and partnership.

15+
Years SiC R&D Focus
200+
SiC Devices Developed
50+
Patents & IP Assets
Global Reach

Industries & Markets We Serve

SiCBerg serves diverse industries and application verticals worldwide, enabling high-efficiency power systems across the global energy transition.

Renewable Energy

Solar, wind, energy storage

EV Charging

Fast charging infrastructure

Industrial Power

Motor drives, automation

Grid Infrastructure

Transmission, distribution

Rail & Traction

Electric rail systems

Aerospace

Avionics, UAV systems

Data Centers

Server power supplies

Consumer Electronics

Adapters, chargers

Technology Brief

Why Silicon Carbide Matters

Silicon carbide (SiC) is a wide-bandgap semiconductor material with fundamental physical properties that far exceed traditional silicon. These properties translate directly into superior power device performance.

3× wider bandgap enables higher breakdown voltage and higher operating temperatures. 10× higher critical electric field allows thinner drift regions and lower on-resistance. 3× higher thermal conductivity improves heat dissipation and power density.

The result: SiC power devices deliver higher efficiency, greater power density, superior thermal performance, and enhanced reliability compared to silicon — enabling smaller, lighter, more efficient power systems across all applications.

SiC Crystal Structure
3.26 eV
Bandgap
175°C
Max Temp
3× Si
Thermal
SiC Technology
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Ready to Build the Future?

Let's discuss how SiCBerg's silicon carbide technology can power your next-generation systems. Our team is ready to collaborate.

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European silicon carbide power semiconductor platform enabling the next generation of high-efficiency power systems.

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