SiC Device
Platform.
SiCBerg provides a broad portfolio of silicon carbide power devices engineered to support a wide spectrum of high-performance electrical systems.
Our application-aligned approach enables faster time-to-market and superior system-level integration across demanding industries.
Voltage Capability
Max Switching Frequency
Max Junction Temp
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Voltage Rating
Current Range
Application
High-Performance
Switching Devices
High-performance MOSFET devices designed for ultra-efficient switching, reduced conduction losses, and improved thermal stability across demanding applications.
Voltage Ratings
Key Specifications
Key Features
Ultra-Fast
Rectification
Advanced SBD devices enabling faster switching speeds, lower reverse recovery losses, and superior efficiency in modern power conversion systems.
Voltage Ratings
Key Specifications
Key Features
Integrated Power
Solutions
Integrated module architectures designed for higher power applications across industrial equipment, grid infrastructure, and energy systems.
Power Range
Key Specifications
Key Features
Application-Aligned Solutions
SiCBerg works closely with customers to align device architectures with specific system requirements, ensuring optimal performance, efficiency, and reliability.
Requirements Analysis
Deep technical engagement to understand system-level needs and constraints.
Device Optimization
Custom device architectures tailored to specific application requirements.
Validation & Deployment
Rigorous testing and qualification to ensure reliable production deployment.
Device Specifications
Key parameters across SiCBerg's SiC device portfolio.
| Parameter | SiC MOSFETs | SiC Schottky Barrier Diodes | SiC Power Modules |
|---|---|---|---|
| Voltage Range | 650V – 1700V | 600V – 1700V | 1200V – 3300V |
| Current Range | 10A – 200A | 5A – 100A | 50A – 600A |
| Max Junction Temp | 175°C | 175°C | 175°C |
| Switching Frequency | Up to 200 kHz | N/A | Up to 100 kHz |
| Package Types | TO-247, TO-220, D2PAK | TO-220, TO-247, DPAK | Custom baseplate |